Modeling the nucleation and evolution of end of range dislocation loops in silicon

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 835-838

  Avci, Ibrahim ^a   Law, Mark E ^a   Kuryliw, Erik ^a   Jones, Kevin S ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; NUCLEATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MODELS; SINGLE CRYSTALS;

END OF RANGE DEFECTS; SILICON SUBSTRATE;

SILICON WAFERS;

EID: 0035714882     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. {311} defects in silicon: The source of the dislocation loops
2. Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon
3. Physical mechanism of transient enhanced dopant diffusion in ion-implanted silicon
4. A new model for {311} defects based on in-situ measurements
5. Model for the evolution of dislocation loops in silicon
6. Comprehensive model for nitrogen diffusion in silicon