Transient enhanced diffusion of phosphorus and defect evolution in P+ implanted Si

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 175-180

  Li, J ^a   Keys, P ^a   Chen, J ^a   Law, M E ^a   Jones, K S ^a   Jasper, Craig ^b  

^a University of Florida   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ION IMPLANTATION; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

DOT DEFECTS; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0032691965     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-175     Document Type: Article

References (8)

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8. J. Li and K. Jones, unpublished work