Transport properties of proton-irradiated GaAs/AlGaAs two-dimensional electron gas structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 160, Issue 1, 2000, Pages 33-37

  Wang, Qin ^a   Xu, H Q ^a   Omling, P ^a   Yang, C ^a   Malmqvist, K G ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SHUBNIKOV-DE HAAS EFFECT;

QUANTUM LIFETIME;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033910134     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00549-2     Document Type: Article

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