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Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 480-484

γ-Ray irradiation effects on 6H-SiC MOSFET

(5) Ohshima, Takeshi a Yoshikawa, Masahito a Itoh, Hisayoshi a Aoki, Yasushi a,b Nashiyama, Isamu a

a JAPAN ATOMIC ENERGY AGENCY (Japan)

b SUMITOMO HEAVY INDUSTRIES LTD (Japan)

Author keywords

6H SiC; Interface traps; MOSFET; Oxide trapped charge; Pyrogenic and dry oxidation processes; ray irradiation

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRAPS; GAMMA RAYS; GATES (TRANSISTOR); INTERFACES (MATERIALS); IRRADIATION; OXIDATION; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE;

GAMMA IRRADIATION; INTERFACE TRAPS; PYROGENIC OXIDATION;

MOSFET DEVICES;

INTERFACE; IRRADIATION; OXIDATION;

EID: 0033618687 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00560-1 Document Type: Article

Times cited : (22)

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