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Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 517-520

EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC

(6) Bratus, V Ya a Makeeva, I N a Okulov, S M a Petrenko, T L a Petrenko, T T a Von Bardeleben, H J b

a INSTITUTE OF HYDROBIOLOGY (Ukraine)

b SORBONNE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON IRRADIATION; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; PARAMAGNETIC RESONANCE; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

CARBON VACANCY; HYPERFINE SPLITTING;

SILICON CARBIDE;

EID: 14344284767 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.517 Document Type: Article

Times cited : (25)

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