High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Saddow, S E ^a   Williams, J ^b   Isaacs Smith, T ^b   Capano, M A ^c   Cooper, J A ^c   Mazzola, M S ^a   Hsieh, A J ^d   Casady, J B ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c PURDUE UNIVERSITY   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SILANES;

SILANE OVERPRESSURE; STEP BUNCHING;

SILICON CARBIDE;

EID: 0033703525     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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