Understanding the role of defects in limiting the minority carrier lifetime in SiC

Materials Research Society Symposium - Proceedings

Volumn 483, Issue , 1997, Pages 197-202

  Doolittle, W A ^a   Rohatgi, A ^a   Ahrenkiel, R ^a   Levi, D ^a   Augustine, G ^a   Hopkins, R H ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; EPITAXIAL GROWTH; PHOTOCONDUCTIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE TREATMENT; THIN FILMS;

DIFFUSION LENGTH MAPPING (DLM); ELECTRON BEAM INDUCED CURRENT (EBIC); PHOTOCONDUCTIVE DECAY (PCD);

SILICON CARBIDE;

EID: 0031387529     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-483-197     Document Type: Conference Paper

References (6)