The Role of Nanoclusters in Reducing Hole Trapping in Ion Implanted Oxides

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1947-1953

  Mrstik, B J ^a   Hughes, H L ^a   Gouker, P ^b   Lawrence, R K ^c   McMarr, P J ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c SFA INC   (United States)

Author keywords

Charge injection; Charge trapping; Cluster formation; Ion implantation; Photoluminescence; Proton trapping; Radiation effects; Silicon dioxide

Indexed keywords

ELECTRIC POTENTIAL; HOLE TRAPS; ION IMPLANTATION; IONIZING RADIATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RADIATION EFFECTS; X RAY ANALYSIS;

CHARGE INJECTION; CHARGE TRAPPING; CLUSTER FORMATION; NANOCLUSTERS; PROTON TRAPPING;

SILICA;

EID: 1242265273     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821382     Document Type: Conference Paper

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