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Volumn 82, Issue 5, 1997, Pages 2184-2199

Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001175808     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366025     Document Type: Article
Times cited : (26)

References (95)
  • 33
    • 3743105603 scopus 로고
    • Silicon-on-Insulator Technology and Devices, edited by S. Cristoloveanu
    • S. I. Fedoseenko, V. V. Afanas'ev, and A. G. Revesz, in Silicon-on-Insulator Technology and Devices, edited by S. Cristoloveanu [Electrochem. Soc. Proc. 94-11, 253 (1994)].
    • (1994) Electrochem. Soc. Proc. , vol.94 , Issue.11 , pp. 253
    • Fedoseenko, S.I.1    Afanas'ev, V.V.2    Revesz, A.G.3
  • 77
    • 85033181512 scopus 로고    scopus 로고
    • private communication
    • M. E. Twigg (private communication).
    • Twigg, M.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.