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Volumn 45, Issue 8, 2001, Pages 1495-1504

Optical and structural characterization of Si nanocrystals ion beam synthesized in SiO2: Correlation between the surface passivation and the photoluminescence emission

(5) Lopez M a Garrido, B a Bonafos, C b Perez Rodriguez A a Morante, J R a

a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA (Spain)

b CEMES CNRS (France)

Author keywords

Ion implantation; Photoluminescence; Si nanocrystals

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRON ENERGY LEVELS; ION BEAMS; ION IMPLANTATION; PARAMAGNETIC RESONANCE; PHONONS; PHOTOEMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0035416577 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(00)00254-9 Document Type: Article

Times cited : (21)

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