The electron trapping behavior of silicon dioxide with ion implanted aluminum

Journal of Electronic Materials

Volumn 6, Issue 5, 1977, Pages 569-579

  Young, D R ^a   DiMaria, D J ^a   Hunter, W R ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Al implantation; electron trapping; SiO2

Indexed keywords

SILICA;

SILICON DIOXIDE;

DIELECTRIC MATERIALS;

EID: 0017532318     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02672234     Document Type: Article

References (7)

1. AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2