Substrate free GaAs photovoltaic cells on Pd-coated silicon with a 20% AM1.5 efficiency

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1806-1811

  Omnes, Franck ^a   Guillaume, Jean Claude ^a   Nataf, Gilles ^a   Jager Waldau, Gerold ^a   Vennegues, Philippe ^a   Gibart, Pierre ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COLOR CENTERS; DIRECT ENERGY CONVERSION; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM INDUCED CURRENTS (EBIC); EPITAXIAL LIFT OFF (ELO) TECHNIQUE;

PHOTOVOLTAIC CELLS;

EID: 0030284973     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543011     Document Type: Article

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