Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 14, 1996, Pages 2080-2082

  Blank, H R ^a   Thomas, M ^a   Wong, K C ^b   Kroemer, H ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042947863     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116886     Document Type: Article

References (9)

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