Simulation of electron storage in Ge/Si hetero-nanocrystal memory

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 767-771

  Yang, H G ^a   Shi, Y ^a   Bu, H M ^a   Wu, J ^a   Zhao, B ^a   Yuan, X L ^a   Shen, B ^a   Han, P ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Ge Si; Memory; Nanocrystal; Simulation

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

ELECTRON STORAGE;

SEMICONDUCTOR STORAGE;

EID: 0035335360     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00033-8     Document Type: Article

References (11)

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6. x
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8. Tunnelling from a many-particle point of view
9. Transfer Hamiltonian description of resonant tunnelling
10. Frequency limit of double-barrier resonant-tunneling oscillators