Formation of the 1.014 eV photoluminescence Cu center in Cu-implanted silicon crystals and the center's model

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 11 B, 2004, Pages

  Nakamura, Minoru ^a   Ohno, Hideki ^b   Murakami, Susumu ^c  

^a Tokyo National College of Technology ^*  (Japan)

^b TOKYO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c HITACHI LTD   (Japan)

Author keywords

Cu center model; Cu implantation; Photoluminescence Cu center; Silicon crystal; Substitutional Cu; Vacancy action

Indexed keywords

ANNEALING; COPPER; CRYSTALS; INTEGRATED CIRCUITS; ION IMPLANTATION; PHOTODIODES; SILICON;

CU CENTER MODELS; CU IMPLANTATION; PHOTOLUMINESCENCE CU CENTER; SILICON CRYSTALS; SUBSTITUTIONAL CU; VACANCY ACTIONS;

PHOTOLUMINESCENCE;

EID: 11244274012     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1466     Document Type: Article

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