Effect of copper on gate oxide integrity

Journal of the Electrochemical Society

Volumn 147, Issue 11, 2000, Pages 4305-4306

  Lin, Y H ^a   Wu, Y H ^a   Chin, A ^a   Pan, F M ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; OXIDES; SILICON WAFERS;

FOWLER NORDHEIM TUNNELING CURRENT; GATE OXIDES;

MOS CAPACITORS;

EID: 0034319845     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1394059     Document Type: Article

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