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Volumn 45, Issue 6 PART 1, 1998, Pages 2563-2570

Technique to measure an ion track profile

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ION BEAMS; ION BOMBARDMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

EID: 0032320420     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736498     Document Type: Article
Times cited : (15)

References (27)
  • 8
    • 33747324487 scopus 로고    scopus 로고
    • Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research, 1820 March 1996, JAERI-Conf 97-003, page 289.
    • K. Furukawa, S. Ohno, H. Namba, M. Taguchi & R. Watanabe, Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research, 1820 March 1996, JAERI-Conf 97-003, page 289.
    • S. Ohno, H. Namba, M. Taguchi & R. Watanabe
    • Furukawa, K.1
  • 10
    • 33747239913 scopus 로고    scopus 로고
    • W.Schmid, Appl. Phys. Lett., Vol.31, n°5, 340, 1977;
    • J.Dziewior, W.Schmid, Appl. Phys. Lett., Vol.31, n°5, 340, (1977;
    • Dziewior, J.1
  • 25
    • 0026817842 scopus 로고    scopus 로고
    • IEEE Trans. Nucl. Sei. NS-39. No. 1,7(1992)
    • K.M.Horn, B.L.Doyle, F.W.Sexton, IEEE Trans. Nucl. Sei. NS-39. No. 1,7(1992)
    • B.L.Doyle, F.W.Sexton
    • Horn, K.M.1
  • 26
    • 33747290467 scopus 로고    scopus 로고
    • on line documentation 4.0(1997)
    • ISE TCAD (PROSIT, DESSIS) on line documentation 4.0(1997)
    • ISE TCAD (PROSIT, DESSIS)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.