Charge storage effects in Si nanocrystals embedded in SiO2 thin films

Solid State Phenomena

Volumn 80-81, Issue , 2001, Pages 243-248

  Gonzalez Varona O ^a   Garrido, B ^a   Perez Rodriguez A ^a   Bonafos, C ^a   Montserrat, J ^a   Morante, J R ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Fowler Nordheim tunneling; Ion implantation; Memory effects; Si nanocrystals

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRON TUNNELING; ION BEAMS; MOS DEVICES; NANOSTRUCTURED MATERIALS; THIN FILMS;

CAPACITANCE VOLTAGE CHARACTERISTICS; CHARGE STORAGE EFFECTS; FOWLER-NORDHEIM TUNNELING;

SEMICONDUCTING SILICON;

EID: 0034829835     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (8)