Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 49-54

  Muller T ^a   Heinig, K H ^a   Moller W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Absorbing interface; Kinetic Monte Carlo simulation; Nonvolatile memory; Nucleation; Si nanocrystals; Spinodal decomposition; TRIDYN

Indexed keywords

COMPUTER SIMULATION; DECOMPOSITION; INTERFACES (MATERIALS); ION IMPLANTATION; MONTE CARLO METHODS; NUCLEATION; PHASE SEPARATION; SEMICONDUCTING SILICON; SILICA;

ABSORBING INTERFACES; KINETIC MONTE CARLO SIMULATION; NONVOLATILE MEMORY; SI NANOCRYSTALS; SPINODAL DECOMPOSITION; TRIDYN;

NANOSTRUCTURED MATERIALS;

EID: 1642337068     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00711-0     Document Type: Conference Paper

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