Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD

Materials Science and Engineering C

Volumn 21, Issue 1-2, 2002, Pages 245-249

  Saidi, F ^a   Hassen, F ^a   Maaref, H ^a   Auvray, L ^b   Dumont, H ^b   Monteil, Y ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

Epilayers; Excitons; MOCVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXCITONS; PHOTOLUMINESCENCE; SPECTROSCOPY;

POTENTIAL FLUCTUATIONS;

MATERIALS SCIENCE;

NITROGEN;

EID: 0036740229     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(02)00074-7     Document Type: Article

References (11)