Metal-organic chemical vapor deposition of HfO2 by alternating supply of tetrakis-diethylamino-hafnium and remote-plasma oxygen

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 6963-6967

  Horii, Sadayoshi ^a   Yamamoto, Kazuhiko ^b   Asai, Masayuki ^a   Miya, Hironobu ^a   Kaneko, Isao ^c   Ishihara, Toshinobu ^c   Hayashi, Shigenori ^b   Niwa, Masaaki ^b  

^a HITACHI KOKUSAI ELECTRIC INC   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Dielectric film; Hafnium oxide; MOCVD; Remote plasma oxygen

Indexed keywords

DIELECTRIC FILMS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OXIDATION; PERMITTIVITY; REDUCTION; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); CONFORMAL DEPOSITION; LOCALIZED OXIDATION OF SILICON (LOCOS); REMOTE-PLASMA OXYGEN (RPO);

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 10844224298     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6963     Document Type: Article

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