-
2
-
-
0021899605
-
-
Chapter 6
-
P.M. Petroff, in: Semiconductors and Semimetals, Vol. 22, 1985, Part A, Chapter 6, p. 379.
-
(1985)
Semiconductors and Semimetals
, vol.22
, Issue.PART A
, pp. 379
-
-
Petroff, P.M.1
-
3
-
-
0026264187
-
Diode laser degradation mechanisms: A review
-
R.G. Waters, Diode laser degradation mechanisms: a review, Prog. Quant. Electr. 15 (1992) 153-174.
-
(1992)
Prog. Quant. Electr.
, vol.15
, pp. 153-174
-
-
Waters, R.G.1
-
5
-
-
0029759066
-
Optical strength of semiconductor laser materials
-
P.G. Eliseev, Optical strength of semiconductor laser materials, Prog. Quant. Electr. 20 (1) (1996) 1.
-
(1996)
Prog. Quant. Electr.
, vol.20
, Issue.1
, pp. 1
-
-
Eliseev, P.G.1
-
7
-
-
0031380880
-
Temperature, stress, disorder, and crystallization effects in laser diodes: Measurements and impacts
-
3001
-
P.W. Epperlein, Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts, SPIE 3001 (1997) 13.
-
(1997)
SPIE
, pp. 13
-
-
Epperlein, P.W.1
-
8
-
-
0031070422
-
Material and fabrication related limitations to high power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes
-
A. Jakubowicz, Material and fabrication related limitations to high power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodes, Mater. Sci. Eng. B 44 (1997) 359.
-
(1997)
Mater. Sci. Eng. B
, vol.44
, pp. 359
-
-
Jakubowicz, A.1
-
9
-
-
0000385402
-
Estimation of the reliability of 0.98 μm InGaAs/AlGaAs strained quantum well lasers
-
M. Okayasu, M. Fukuda, Estimation of the reliability of 0.98 μm InGaAs/AlGaAs strained quantum well lasers, J. Appl. Phys. 72 (1992) 2119.
-
(1992)
J. Appl. Phys.
, vol.72
, pp. 2119
-
-
Okayasu, M.1
Fukuda, M.2
-
10
-
-
0037274906
-
Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers
-
M. Betiatti, F. Laruelle, M. Pommiès, G. Hallais, J. Jiménez, M. Avella, E.V.K. Rao, Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers, Phys. Status Solidi B 195 (2003) 159.
-
(2003)
Phys. Status Solidi B
, vol.195
, pp. 159
-
-
Betiatti, M.1
Laruelle, F.2
Pommiès, M.3
Hallais, G.4
Jiménez, J.5
Avella, M.6
Rao, E.V.K.7
-
12
-
-
0348144242
-
Dislocation climb model in compound semiconductors with zinc-blende structure
-
P.M. Petroff, L.C. Kimerling, Dislocation climb model in compound semiconductors with zinc-blende structure, Appl. Phys. Lett. 29 (1976) 461.
-
(1976)
Appl. Phys. Lett.
, vol.29
, pp. 461
-
-
Petroff, P.M.1
Kimerling, L.C.2
-
13
-
-
0000230194
-
Vacancy controlled model of degradation in InGaAs/AlGaAs/GaAs heterostructure lasers
-
A.A. Hopgood, Vacancy controlled model of degradation in InGaAs/AlGaAs/GaAs heterostructure lasers, J. Appl. Phys. 76 (1994) 4068.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 4068
-
-
Hopgood, A.A.1
-
14
-
-
0018036428
-
Recombination enhanced defect reactions
-
L.C. Kimerling, Recombination enhanced defect reactions, Sol. St. Electron. 21 (1978) 1391.
-
(1978)
Sol. St. Electron.
, vol.21
, pp. 1391
-
-
Kimerling, L.C.1
-
15
-
-
0026155682
-
Dark line resistant diode laser at 0.8 μm comprising InAlGaAs strained quantum well
-
R.G. Waters, R.J. Dalby, J.A. Baumann, J.L. De Sanctis, A.H. Shepard, Dark line resistant diode laser at 0.8 μm comprising InAlGaAs strained quantum well, IEEE Photon Technol. Lett. 3 (1991) 409.
-
(1991)
IEEE Photon Technol. Lett.
, vol.3
, pp. 409
-
-
Waters, R.G.1
Dalby, R.J.2
Baumann, J.A.3
De Sanctis, J.L.4
Shepard, A.H.5
-
16
-
-
0017459306
-
Injection-enhanced dislocation glide under uniaxial stress in GaAs-(GaAl)As double heterostructure laser
-
T. Kamejima, K. Ishida, J. Matsui, Injection-enhanced dislocation glide under uniaxial stress in GaAs-(GaAl)As double heterostructure laser, Jpn. J. Appl. Phys. 16 (1977) 233.
-
(1977)
Jpn. J. Appl. Phys.
, vol.16
, pp. 233
-
-
Kamejima, T.1
Ishida, K.2
Matsui, J.3
-
17
-
-
0019599417
-
High-temperature degradation of InGaAsP/InP light emitting diodes
-
H. Temkin, C.L. Zipfel, V.G. Keramidas, High-temperature degradation of InGaAsP/InP light emitting diodes, J. Appl. Phys. 52 (1981) 5377.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 5377
-
-
Temkin, H.1
Zipfel, C.L.2
Keramidas, V.G.3
-
18
-
-
0141971086
-
Lattice defect structure of degraded InGaAsP-InP double-heterostructure lasers
-
K. Ishida, T. Kamejima, Y. Matsumoto, K. Endo, Lattice defect structure of degraded InGaAsP-InP double-heterostructure lasers, Appl. Phys. Lett. 40 (1982) 16.
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 16
-
-
Ishida, K.1
Kamejima, T.2
Matsumoto, Y.3
Endo, K.4
-
19
-
-
0020720899
-
Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging
-
M. Fukuda, K. Wakita, G. Iwane, Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging, J. Appl. Phys. 54 (1983) 1246.
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 1246
-
-
Fukuda, M.1
Wakita, K.2
Iwane, G.3
-
20
-
-
0032132445
-
Deep level spectroscopy of high-power laser diode arrays
-
J.W. Tomm, A. Barwolff, A. Jaegger, T. Elsaesser, J. Bollmann, W.T. Masselink, A. Gerhardt, J. Donecker, Deep level spectroscopy of high-power laser diode arrays, J. Appl. Phys. 84 (1998) 1325.
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 1325
-
-
Tomm, J.W.1
Barwolff, A.2
Jaegger, A.3
Elsaesser, T.4
Bollmann, J.5
Masselink, W.T.6
Gerhardt, A.7
Donecker, J.8
-
21
-
-
0040592476
-
Kinetic model for gradual degradation in semiconductor lasers and light emitting diodes
-
Y.L. Khait, J. Salzman, R. Beserman, Kinetic model for gradual degradation in semiconductor lasers and light emitting diodes, Appl. Phys. Lett. 53 (1988) 2135.
-
(1988)
Appl. Phys. Lett.
, vol.53
, pp. 2135
-
-
Khait, Y.L.1
Salzman, J.2
Beserman, R.3
-
22
-
-
0034048910
-
Electron microscopy of life tested semiconductor laser diodes
-
M. Vanzi, A. Bonfiglio, F. Magistrali, G. Salmini, Electron microscopy of life tested semiconductor laser diodes, Micron. 31 (2000) 259.
-
(2000)
Micron.
, vol.31
, pp. 259
-
-
Vanzi, M.1
Bonfiglio, A.2
Magistrali, F.3
Salmini, G.4
-
23
-
-
0033285203
-
Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers
-
C. Frigeri, M. Baeumler, A. Migliori, S. Müller, J.L. Weyher, W. Jantz, Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers, Mater. Sci. Eng. B 66 (1999) 209.
-
(1999)
Mater. Sci. Eng. B
, vol.66
, pp. 209
-
-
Frigeri, C.1
Baeumler, M.2
Migliori, A.3
Müller, S.4
Weyher, J.L.5
Jantz, W.6
-
24
-
-
85052253948
-
-
J. Jiménez (Ed.), Taylor and Francis, New York Chapter 1
-
M. Baeumler, W. Jantz, in: J. Jiménez (Ed.), Microprobe Characterization of Semiconductors, Taylor and Francis, New York, 2002, Chapter 1.
-
(2002)
Microprobe Characterization of Semiconductors
-
-
Baeumler, M.1
Jantz, W.2
-
25
-
-
0000683916
-
Optically induced catastrophic degradation in InGaAsP/InP layers
-
H. Temkin, Optically induced catastrophic degradation in InGaAsP/InP layers, Appl. Phys. Lett. 40 (1982) 562.
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 562
-
-
Temkin, H.1
-
26
-
-
0035927130
-
Generic degradation mechanism for 980 nm InGaAs/GaAs strained quantum well lasers
-
S.N.G. Chu, N. Chand, W.B. Joyce, P. Parayanthal, D.P. Wilt, Generic degradation mechanism for 980 nm InGaAs/GaAs strained quantum well lasers, Appl. Phys. Lett. 78 (2001) 3166.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 3166
-
-
Chu, S.N.G.1
Chand, N.2
Joyce, W.B.3
Parayanthal, P.4
Wilt, D.P.5
-
27
-
-
0040797934
-
Misfit stress-induced compositional instability in hetero-epitaxial compound semiconductor structures
-
S.N.G. Chu, R.A. Logan, W.T. Tsang, Misfit stress-induced compositional instability in hetero-epitaxial compound semiconductor structures, J. Appl. Phys. 79 (1996) 1397.
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 1397
-
-
Chu, S.N.G.1
Logan, R.A.2
Tsang, W.T.3
-
28
-
-
21544480361
-
Disorder of an AlAs-GaAs superlattice by impurity diffusion
-
W.D. Laidig, N. Holonyak, M.D. Camras, K. Hess, J.J. Coleman, P.D. Dapkus, J. Bardeen, Disorder of an AlAs-GaAs superlattice by impurity diffusion, Appl. Phys. Lett. 38 (1981) 776.
-
(1981)
Appl. Phys. Lett.
, vol.38
, pp. 776
-
-
Laidig, W.D.1
Holonyak, N.2
Camras, M.D.3
Hess, K.4
Coleman, J.J.5
Dapkus, P.D.6
Bardeen, J.7
-
29
-
-
0041395383
-
Laser operation induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes
-
A. Jakubowicz, A. Oosenbrug, Th. Forster, Laser operation induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes, Appl. Phys. Lett. 63 (9) (1993) 1185.
-
(1993)
Appl. Phys. Lett.
, vol.63
, Issue.9
, pp. 1185
-
-
Jakubowicz, A.1
Oosenbrug, A.2
Forster, Th.3
-
30
-
-
0033896234
-
Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes
-
I. Rechenberg, A. Klehr, W. Erfurth, F. Bugge, A. Klein, Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes, J. Cryst. Growth 210 (2000) 307.
-
(2000)
J. Cryst. Growth
, vol.210
, pp. 307
-
-
Rechenberg, I.1
Klehr, A.2
Erfurth, W.3
Bugge, F.4
Klein, A.5
-
32
-
-
0027652450
-
Facet heating of quantum well lasers
-
G. Chen, C.L. Tien, Facet heating of quantum well lasers, J. Appl. Phys. 74 (1993) 2167.
-
(1993)
J. Appl. Phys.
, vol.74
, pp. 2167
-
-
Chen, G.1
Tien, C.L.2
-
33
-
-
0000351051
-
Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facets
-
W.C. Tang, H.J. Rosen, P. Vettiger, D.J. Webb, Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facets, Appl. Phys. Lett. 59 (1991) 1005.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 1005
-
-
Tang, W.C.1
Rosen, H.J.2
Vettiger, P.3
Webb, D.J.4
-
34
-
-
0027812558
-
Micro-temperature measurements on semiconductor laser mirrors by reflectance modulation: A newly developed technique for laser characterization
-
P.W. Epperlein, Micro-temperature measurements on semiconductor laser mirrors by reflectance modulation: a newly developed technique for laser characterization, Jpn. J. Appl. Phys. 32 (1993) 5514.
-
(1993)
Jpn. J. Appl. Phys.
, vol.32
, pp. 5514
-
-
Epperlein, P.W.1
-
35
-
-
0034172208
-
Facet degradation of high power diode laser arrays
-
J.W. Tomm, E. Thamm, A. Barwolff, T. Elsaesser, J. Luft, M. Baeumler, S. Müller, W. Jantz, I. Rechenberg, G. Erbert, Facet degradation of high power diode laser arrays, Appl. Phys. A 70 (2000) 377.
-
(2000)
Appl. Phys. A
, vol.70
, pp. 377
-
-
Tomm, J.W.1
Thamm, E.2
Barwolff, A.3
Elsaesser, T.4
Luft, J.5
Baeumler, M.6
Müller, S.7
Jantz, W.8
Rechenberg, I.9
Erbert, G.10
-
36
-
-
12744250108
-
-
J. Jiménez (Ed.), Taylor and Francis, New York Chapter 2
-
J. Jiménez, I. De Wolf, J.P. Landesman, in: J. Jiménez (Ed.), Microprobe Characterization of Semiconductors, Taylor and Francis, New York, 2002, Chapter 2.
-
(2002)
Microprobe Characterization of Semiconductors
-
-
Jiménez, J.1
De Wolf, I.2
Landesman, J.P.3
-
37
-
-
0030422480
-
Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes
-
J.M. Rommel, P. Gavrilovic, F.P. Dabkowski, Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes, J. Appl. Phys. 80 (1996) 6547.
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 6547
-
-
Rommel, J.M.1
Gavrilovic, P.2
Dabkowski, F.P.3
-
38
-
-
0032064251
-
Facet heating and axial temperature profiles in high power GaAlAs/GaAs laser diodes
-
U. Menzel, R. Puchert, A. Barwolff, A. Lau, Facet heating and axial temperature profiles in high power GaAlAs/GaAs laser diodes, Microelectron. Reliability 38 (1998) 821.
-
(1998)
Microelectron. Reliability
, vol.38
, pp. 821
-
-
Menzel, U.1
Puchert, R.2
Barwolff, A.3
Lau, A.4
-
39
-
-
0001565701
-
Steady state model for facet heating leading to thermal runaway in semiconductor lasers
-
R. Schatz, C.G. Bethea, Steady state model for facet heating leading to thermal runaway in semiconductor lasers, J. Appl. Phys. 76 (1994) 2509.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 2509
-
-
Schatz, R.1
Bethea, C.G.2
-
40
-
-
0000465696
-
Facet oxidation of InGaAs/GaAs strained quantum-well lasers
-
M. Okayasu, M. Fukuda, T. Takeshita, S. Uehara, K. Kurumada, Facet oxidation of InGaAs/GaAs strained quantum-well lasers, J. Appl. Phys. 69 (1991) 8346.
-
(1991)
J. Appl. Phys.
, vol.69
, pp. 8346
-
-
Okayasu, M.1
Fukuda, M.2
Takeshita, T.3
Uehara, S.4
Kurumada, K.5
-
41
-
-
0000816181
-
Comparison of the facet heating behavior between AlGaAs single quantum-well lasers and double-heterojunction lasers
-
W.C. Tang, H.J. Rosen, P. Vettiger, J. Webb, Comparison of the facet heating behavior between AlGaAs single quantum-well lasers and double-heterojunction lasers, Appl. Phys. Lett. 60 (9) (1992) 1043.
-
(1992)
Appl. Phys. Lett.
, vol.60
, Issue.9
, pp. 1043
-
-
Tang, W.C.1
Rosen, H.J.2
Vettiger, P.3
Webb, J.4
-
42
-
-
0000332195
-
Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts
-
F.U. Herrmann, S. Beeck, G. Abstreiter, C. Hanke, C. Hoyler, L. Korte, Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts, Appl. Phys. Lett. 58 (1991) 1007.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 1007
-
-
Herrmann, F.U.1
Beeck, S.2
Abstreiter, G.3
Hanke, C.4
Hoyler, C.5
Korte, L.6
-
43
-
-
0026942757
-
Chemical changes accompanying facet degradation of AlGaAs quantum well lasers
-
F.A. Houle, D.L. Neiman, W.C. Tang, H.J. Rosen, Chemical changes accompanying facet degradation of AlGaAs quantum well lasers, J. Appl. Phys. 72 (1992) 3884.
-
(1992)
J. Appl. Phys.
, vol.72
, pp. 3884
-
-
Houle, F.A.1
Neiman, D.L.2
Tang, W.C.3
Rosen, H.J.4
-
44
-
-
0028382941
-
Peculiarities of catastrophic optical damage in single quantum well InGaAsP/InGaP buried-heterostructure lasers
-
J.S. Yoo, S.H. Lee, G.T. Park, Y.T. Ko, T. Kim, Peculiarities of catastrophic optical damage in single quantum well InGaAsP/InGaP buried-heterostructure lasers, J. Appl. Phys. 75 (1994) 1840.
-
(1994)
J. Appl. Phys.
, vol.75
, pp. 1840
-
-
Yoo, J.S.1
Lee, S.H.2
Park, G.T.3
Ko, Y.T.4
Kim, T.5
-
45
-
-
0025682261
-
High-power operation in 0.98 μm strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers
-
T. Takeshita, M. Okayasu, S. Uehara, High-power operation in 0.98 μm strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers, IEEE Photon. Technol. Lett. 2 (1990) 849.
-
(1990)
IEEE Photon. Technol. Lett.
, vol.2
, pp. 849
-
-
Takeshita, T.1
Okayasu, M.2
Uehara, S.3
-
46
-
-
0032017268
-
High performance AlGaAs-based laser diodes: Fabrication, characterization and applications
-
V. Iakolev, A. Sarbu, A. Mereutza, G. Suruceanu, A. Caliman, O. Catughin, A. Lupu, S. Vieru, High performance AlGaAs-based laser diodes: fabrication, characterization and applications, Microelectron. J. 29 (1998) 97.
-
(1998)
Microelectron. J.
, vol.29
, pp. 97
-
-
Iakolev, V.1
Sarbu, A.2
Mereutza, A.3
Suruceanu, G.4
Caliman, A.5
Catughin, O.6
Lupu, A.7
Vieru, S.8
-
47
-
-
36549104207
-
Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers
-
A. Moser, E.E. Latta, Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers, Appl. Phys. Lett. 55 (1989) 1152.
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 1152
-
-
Moser, A.1
Latta, E.E.2
-
48
-
-
0001001409
-
High-power operation of strained InGaAs/AlGaAs single quantum well lasers
-
A. Moser, A. Oosenbrug, E.E. Latta, Th. Forster, M. Gasser, High-power operation of strained InGaAs/AlGaAs single quantum well lasers, Appl. Phys. Lett. 59 (1991) 2642.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2642
-
-
Moser, A.1
Oosenbrug, A.2
Latta, E.E.3
Forster, Th.4
Gasser, M.5
-
49
-
-
0141936379
-
Optically enhanced oxidation of III-V compound semiconductors
-
M. Fukuda, K. Takahei, Optically enhanced oxidation of III-V compound semiconductors, J. Appl. Phys. 57 (1985) 129.
-
(1985)
J. Appl. Phys.
, vol.57
, pp. 129
-
-
Fukuda, M.1
Takahei, K.2
-
50
-
-
0002072628
-
High power Al-free diode lasers
-
D. Botez, High power Al-free diode lasers, Compound Semicond. Magazine 5 (1999) 6.
-
(1999)
Compound Semicond. Magazine
, vol.5
, pp. 6
-
-
Botez, D.1
|