Deep level spectroscopy of high-power laser diode arrays

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1325-1332

  Tomm, J W ^a   Barwolff A ^a   Jaeger, A ^a   Elsaesser, T ^a   Bollmann, J ^b   Masselink, W T ^b   Gerhardt, A ^c   Donecker, J ^c  

^a MAX BORN INSTITUT   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; BINDING ENERGY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH POWER LASERS; LIGHT EMISSION; OPTICAL VARIABLES MEASUREMENT; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

ABSORPTION BAND EDGE; DEEP DEFECT CENTERS; GRADED INDEX STRUCTURE; HIGH POWER LASER DIODE ARRAYS; STEP INDEX STRUCTURE;

QUANTUM WELL LASERS;

EID: 0032132445     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368201     Document Type: Article

References (15)

1. J. G. Endriz et al., IEEE J. Quantum Electron. 28, 952 (1992).
2. M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs (Artech House, Boston, 1991).
3. P. G. Eliseev, Reliability Problems of Semiconductor Lasers (Nova Science, Commack, NY, 1991), pp. 197-223.
4. T. V. Torchinskaya and T. G. Berdinskikh, in Mechanisms of Degradation of III-V Semiconductor Light-Emitting Diodes and Lasers, Welding and Surfacing Reviews, edited by E. Paton (Harwood Academic, 1997), Vol. 7, Part 2, pp. 1-111.
5. J. W. Tomm, A. Jaeger, A. Bärwolff, T. Elsaesser, A. Gerhardt, and J. Donecker, Appl. Phys. Lett. 71, 2233 (1997).
6. J. W. Tomm, A. Bärwolff, U. Menzel, M. Voß, R. Puchert, T. Elsaesser, F. X. Daiminger, S. Heinemann, and J. Luft, J. Appl. Phys. 81, 2059 (1997).
7. A. Ovtchinnikov, J. Näppi, J. Aarik, S. Mohrdiek, and H. Assonen, Proc. SPIE 3004, 34 (1997).
8. A. Richter, J. W. Tomm, Ch. Lienau, and J. Luft, Appl. Phys. Lett. 69, 3981 (1996).
9. Ch. Lienau, A. Richter, and J. W. Tomm, Appl. Phys. A: Mater. Sci. Process. 64, 341 (1997).
10. A. Chantre, G. Vincent, and D. Bois, Phys. Rev. B 23, 5335 (1981).
11. L, Tarricone, C. Arena, A. Parisini, and F. Genova, J. Appl. Phys. 72, 3578 (1992).
12. S. V. Zhokhovets, R. Goldhahn, G. Gobsch, N. Stein, J. M. Chamberlain, T. S. Chen, and M. Henini, Semiconductors 29, 639 (1995).
13. D. V. Lang, J. Appl. Phys. 45, 3014 (1974).
14. G. Lucovsky, Solid State Commun. 3, 299 (1965).
15. P. M. Mooney, Semicond. Sci. Technol. 6, B1 (1991).