Facet heating and axial temperature profiles in high-power GaAlAs/GaAs laser diodes

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 821-825

  Menzel, U ^a   Puchert, R ^a   Barwolff A ^a   Lau, A ^a  

^a MAX BORN INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HIGH POWER LASERS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

AXIAL TEMPERATURE PROFILES; FACET HEATING;

SEMICONDUCTOR LASERS;

EID: 0032064251     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00016-X     Document Type: Article

References (13)

1. 1-xAs double-hetero-structure laser material. J. Appl. Phys. 1979;50:3721-32.
2. Epperlein PW, Bona GL, Roentgen P. Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements. Appl. Phys. Lett. 1992;60:680-2.
3. Puchert R, Bärwolff A, Menzel U, Lau A, Voß M, Elsaesser T. Facet and bulk heating of GaAs/AlGaAs high-power laser arrays studied in spatially resolved emission and micro-Raman experiments. J. Appl. Phys. 1996;80:5559-63.
4. Epperlein PW. Micro-temperature measurement on semi-conductor laser mirrors by reflectance modulation: a newly developed technique for laser characterisation. Jpn. J. Appl. Phys. 1993;32:5514-22.
5. Nakwaski W. Three-dimensional time-dependent thermal model of catastrophic mirror damage in stripe-geometry double-heterostructure GaAs/(AlGa)As diode lasers. Opt. Quantum Electron. 1988;21:331-4.
6. Menzel, U, Puchert, R, Bärwolff, A, Lau, A. Facet heating in high power GaAlAs/GaAs edge emitting laser diodes. In: Proc. of the 26th Eur. Solid State Device Res. Conf., Bologna (Italy): Editions Frontiers, Italy, 1996.
7. Tang WC, Rosen HJ, Vettinger P, Webb DJ. Comparison of the facet heating behavior between AlGaAs single quantum well lasers and double-heterojuncton lasers. SPIE 1992;1634:198-202.
8. Brugger H, Epperlein PW. Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes. Appl. Phys. Lett. 1990;56:1049-51.
9. Krantz MC, Rosen HJ, Lenth W. Localised temperature dynamics of GaAlAs laser facets investigated by Raman microprobe measurements. Electron. Lett. 1990;26:990-2.
10. Voss M, Lier C, Menzel U, Bärwolff A, Elsässer T. Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks. J. Appl. Phys. 1996;79:1170-2.
11. Chinn SR, Zory PS, Reisinger AR. A model for GRIN-SCH-SQW diode lasers. IEEE J. Quantum Electron. 1988;24:2191-214.
12. Press, WH, Flannery, BP, Teukolsky, SA and Vetterling, WT. Numerical Recipes in Pascal. Cambridge: Cambridge University Press, 1989.
13. Menzel U, Bärwolff A, Enders P, Ackermann D, Puchert R, Voß M. Modelling the temperature dependence of threshold current, external differential efficiency and lasing wavelength in QW laser diodes. Semicond. Sci. Technol. 1995;10:1382-92.