Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 307-312

  Rechenberg, I ^a   Klehr, A ^a   Richter, U ^b   Erfurth, W ^c   Bugge, F ^a   Klein, A ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b Labor für Elektronenmikroskopie   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL LATTICES; DEGRADATION; ELECTRON BEAMS; INTERDIFFUSION (SOLIDS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; WAVEGUIDE COMPONENTS; X RAY CRYSTALLOGRAPHY;

ALUMINUM GALLIUM ARSENIDE; GALLIUM INDIUM ARSENIDE; GALLIUM INDIUM PHOSPHIDE; RIDGE WAVEGUIDE (RW) DIODES;

SEMICONDUCTOR LASERS;

EID: 0033896234     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00702-2     Document Type: Article

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