Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 159-164

  Bettiati, M ^a   Laruelle, F ^a   Pommies M ^a   Hallais, G ^a   Jimenez J ^b   Avella, M ^b   Rao, E V K ^c  

^a NOKIA RESEARCH CENTER   (United States)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CATHODOLUMINESCENCE; CURRENT DENSITY; IMPURITIES; INDIUM ALLOYS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

PUMP LASERS;

SEMICONDUCTOR LASERS;

EID: 0037274906     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306297     Document Type: Conference Paper

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