Temperature, stress, disorder and crystallization effects in laser diodes: Measurements and impacts

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 13-28

  Epperlein, Peter W ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

GaAs AlGaAs; GaInP AlGaInP; InGaAs AlGaAs; Laser degradation; Laser diodes; Laser temperatures; Lattice disorder; Luminescence; Mechanical stress; Raman spectroscopy; Recrystallization; Thermoreflectance

Indexed keywords

AMORPHOUS SILICON; DEGRADATION; DIODES; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; GEOMETRICAL OPTICS; HETEROJUNCTIONS; LASER CLADDING; LASERS; LIGHT EMISSION; LUMINESCENCE; MODULATION; QUANTUM WELL LASERS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RECRYSTALLIZATION (METALLURGY); REFLECTION; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS; STRESSES; TENSILE STRENGTH; TENSILE STRESS; WAVEGUIDES; CRYSTALLIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

GAAS/ALGAAS; GAINP/ALGAINP; INGAAS/ALGAAS; LASER DEGRADATION; LASER DIODES; LASER TEMPERATURES; LATTICE DISORDER; MECHANICAL STRESS; RECRYSTALLIZATION; THERMOREFLECTANCE; ATOMIC DISORDERS; HIGH-POWER LASERS; REFLECTANCE MODULATION;

MIRRORS; SEMICONDUCTOR LASERS;

EID: 0031380880     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273793     Document Type: Conference Paper

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