In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 2617-2626

  Zhang, S L ^a,b   Lavoie, C ^a   Cabral Jr , C ^a   Harper, J M E ^a   D'Heurle, F M ^a   Jordan Sweet, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000988870     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369626     Document Type: Article

References (41)

1. Binary Alloy Phase Diagrams, edited by T. B. Massalski (American Society for Metals, Metals Park, OH, 1986), p. 2054.
2. F. M. d'Heurle, P. Gas, I. Engström, S. Nygren, M Östling, and C. S. Petersson, IBM RC Report 11151, Yorktown Heights, NY, 1985.
3. R. Beyers and R. Sinclair, J. Appl. Phys. 57, 5240 (1985).
4. 2), JCPDS-International Center for Diffraction Data, PDF-2 Data-base, 12 Campus Boulevard, Newton Square, PA 19073-3273.
5. F. M. d'Heurle, J. Mater. Res. 3, 167 (1988).
6. L. A. Clevenger, C. Cabral, Jr., R. A. Roy, C. Lavoie, J. Jordan-Sweet, S. Brauer, G. Morales, K. F. Ludwig, Jr., and G. B. Stephenson, Thin Solid Films 289, 220 (1996).
7. R. W. Mann and L. A. Clevenger, J. Electrochem. Soc. 141, 1347 (1994).
8. R. Beyers, D. Coulman, and P. Merchant, J. Appl. Phys. 61, 5110 (1987).
9. Y. Matsubara, T. Horiuchi, and K. Okumura, Appl. Phys. Lett. 62, 2643 (1993).
10. T. Karlin, W. Kaplan, and S.-L. Zhang, Phys. Scr. T74, 38 (1994).
11. H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi, and R. J. Nemanich, J. Appl. Phys. 71, 4269 (1992).
12. J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, IEEE Trans. Electron Devices ED-38, 262 (1991).
13. T. Ohguro et al., IEEE Trans. Electron Devices ED-41, 2305 (1994).
14. J. A. Kittl, Q. A. Prinslow, P. P. Apte, and M. F. Pas, Appl. Phys. Lett. 67, 2308 (1995).
15. K. L. Saenger, J. C. Cabral, Jr., L. A. Clevenger, R. A. Roy, and S. Wind, J. Appl. Phys. 78, 7040 (1995).
16. R. W. Mann, G. L. Miles, T. A. Knotts, D. W. Rakowski, L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, and C. Cabral, Jr., Appl. Phys. Lett. 67, 3729 (1995).
17. A. Mouroux, S.-L. Zhang, W. Kaplan, S. Nygren, M. Östling, and C. S. Petersson, Appl. Phys. Lett. 69, 975 (1996).
18. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, R. A. Roy, K. L. Saenger, G. L. Miles, and R. W. Mann, J. Mater. Res. 12, 304 (1997).
19. A. Mouroux, S.-L. Zhang, and C. S. Petersson, Phys. Rev. B 56, 10614 (1997).
20. A. Mouroux, B. Reynard, and S.-L. Zhang, in Advanced Metallization and Interconnect Systems for ULSI Application in 1997, San Diego, California, USA, 30 September-2 October 1997, edited by R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, and N. Kobayashi (Materials Research Society, Warrendale, PA, 1998), pp. 605-609.
21. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, R. A. Roy, C. Lavoie, K. L. Saenger, G. L. Miles, R. W. Mann, and J. S. Nakos, Appl. Phys. Lett. 71, 3531 (1997);
22. in Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, San Diego, California, 30 September-2 October 1997, edited by R. Cheung, J. Klein, K Tsubouchi, M. Murakami, and N. Kobayashi (Materials Research Society, Warrendale, PA, 1998), p. 557.
23. H. J. Goldschmidt, Interstitial Alloys (Butterworths, London, 1967, now available from University Microfilms International, Ann Arbor, Michigan), pp. 322-327.
24. F. M. d'Heurle, in VLSI Science and Technology, edited by C. Dell'Oca and W. M. Bullis (The Electrochemical Society, Pennington, NJ, 1982), pp. 194-212.
25. F. Bondi, M. Iannuzzi, L. Miglio, and V. Meregalli, Appl. Phys. Lett. 73, 1964 (1998).
26. Z. Ma, L. A. Allen, and D. D. J. Allman, J. Appl. Phys. 77, 4384 (1995).
27. G. B. Stephenson, K. F. Ludwig, Jr., J. L. Jordan-Sweet, S. Brauer, J. Mainville, Y. S. Yang, and M. Sutton, Rev. Sci. Instrum. 60, 1537 (1989).
28. 2), JCPDS-International Center for Diffraction Data, PDF-2 Data-base, 12 Campus Boulevard, Newton Square, PA 19073-3273.
29. 4), JCPDS-International Center for Diffraction Data, PDF-2 Data-base, 12 Campus Boulevard, Newton Square, PA 19073-3273.
30. 3), JCPDS-International Center for Diffraction Data, PDF-2 Data-base, 12 Campus Boulevard, Newton Square, PA 19073-3273.
31. M.-A. Nicolet and S. S. Lau, in VLSI Electronics, Microstructure Science, edited by N. G. Einspurch and G. B. Larrabee (Academic, New York, 1983). p. 428.
32. 2)), JCPDS-Intemational Center for Diffraction Data, PDF-2 Data-base, 12 Campus Boulevard, Newton Square, PA 19073-3273.
33. M.-A. Nicolet and S. S. Lau, in VLSI Electronics, Microstructure Science, edited by N. G. Einspurch and G. B. Larrabee (Academic, New York, 1983). p. 360.
34. S.-i. Ogawa, T. Kouzaki, T. Yoshida, and R. Sinclair, J. Appl. Phys. 70, 827 (1991).
35. I. J. M. M. Raaijmakers and K.-B. Kim, J. Appl. Phys. 67, 6255 (1990).
36. I. Ames, F. M. d'Heurle, and R. E. Horstmann, IBM J. Res. Dev. 14, 461 (1970).
37. A. Quintero, C. Cabral, Jr., C. Lavoie, J. M. E. Harper, and M. Libera (unpublished results).
38. S.-L. Zhang and F. M. d'Heurle, Thin Solid Films 213, 34 (1992), and references therein.
39. F. Chu, M. Lei, S. A. Maloy, J. J. Petrovic, and T. E. Mitchell, Acta Mater. 44, 3035 (1996).
40. R. A. Roy, L. A. Clevenger, C. Cabral, Jr., K. L. Saenger, S. Brauer, J. Jordan Sweet, J. Bucchinano, G. B. Stephenson, G. Morales, and K. F. Ludwig, Jr., Appl. Phys. Lett. 66, 1732 (1995).
41. V. Svilan, K. P. Rodbell, L. A. Clevenger, C. Cabral, Jr., R. A. Roy, C. Lavoie, J. Jordan-Sweet, and J. M. E. Harper, Mater. Res. Soc. Symp. Proc. 427, 53 (1996).