A high-speed, high-sensitivity silicon lateral trench photodetector

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 395-397

  Yang, Min ^a,b   Rim, Kern ^a,b   Rogers, Dennis L ^b   Schaub, Jeremy D ^b   Welser, Jeffrey J ^a,c   Kuchta, Daniel M ^a,b   Boyd, Diane C ^c   Rodier, Francis ^d   Rabidoux, Paul A ^c   Marsh, James T ^c   Ticknor, Adam D ^c   Yang, Qingyun ^c   Upham, Allan ^c   Ramac, Samuel C ^c  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

^d Altis Semiconductor   (France)

Author keywords

Optical receivers; Optoelectronic devices; Photodetector; Photodiodes; Silicon

Indexed keywords

PHOTOCARRIERS; PHOTORECEIVER; RESPONSIVITY; SILICON LATERAL TRENCH PHOTODETECTOR; TRANSIMPEDANCE AMPLIFIER;

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; LIGHT ABSORPTION; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY;

SEMICONDUCTING SILICON;

EID: 0036646195     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015212     Document Type: Article

References (12)

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