Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 400-402

  Huang, Hsiang Jen ^a   Chen, Kun Ming ^a   Chang, Chun Yen ^a   Chen, Liang Po ^b   Huang, Guo Wei ^b   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

SELECTIVE EPITAXIAL GROWTH (SEG); ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

MOSFET DEVICES;

EID: 0034258791     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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