Parasitic modeling and noise mitigation in advanced RF/mixed-signal silicon germanium processes

IEEE Transactions on Electron Devices

Volumn 50, Issue 3, 2003, Pages 700-717

  Singh, Raminderpal ^a   Tretiakov, Youri V ^a   Johnson, Jeffrey B ^a   Sweeney, Susan L ^a   Barry, Robert L ^a   Kumar, Mukesh ^a   Erturk, Mete ^a   Katzenstein, John ^a   Dickey, Carl E ^a   Harame, David L ^a  

^a IBM   (United States)

Author keywords

Computer aided design (CAD); Integrated circuit (IC); Interconnect; Modeling; Noise mitigation; Parasitic noise; Radio frequency (RF); Silicon germanium; Substrate; Transmission lines

Indexed keywords

COMPUTER AIDED DESIGN; FREQUENCY CONVERTERS; MIXER CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; SUBSTRATES;

PARASITIC MODELING; PARASITIC NOISE; SILICON GERMANIUM PROCESS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0038644392     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.810469     Document Type: Article

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