Suppression of NiSi-to-NiSi2 transition using very short-time RTA silicidation

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 47-52

  Ma, D ^a   Chi, D Z ^a   Wang, W D ^a   Wong, A S W ^a   Chua, S J ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH TEMPERATURE OPERATIONS; PHASE DIAGRAMS; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; REACTION KINETICS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; THICKNESS MEASUREMENT;

NICKEL DISILICIDE; NICKEL SILICIDE; PHASE TRANSFORMATION KINETICS; SILICIDATION; TEMPERATURE TIME TRANSFORMATION;

NICKEL COMPOUNDS;

EID: 0036945462     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-716-b1.9     Document Type: Conference Paper

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