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Volumn 45, Issue 6, 2002, Pages 83-94

Shallow and abrupt junction formation: Paradigm shift at 65-70 nm

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DIELECTRIC MATERIALS; PERMITTIVITY; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; THERMODYNAMIC STABILITY;

EID: 0036602984     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (29)

References (35)
  • 10
    • 0006016219 scopus 로고    scopus 로고
    • private customer communication on 65 nm and 90 nm targets
    • Borland, J.1
  • 34
    • 0005972899 scopus 로고    scopus 로고
    • New SPE patent filing, Nov. 2001
    • Borland1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.