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Volumn 54 B54, Issue 3, 1998, Pages 153-160

Wet rapid thermal oxidation of silicon with a pyrogenic system

Author keywords

Deal Grove model; Electrical breakdown; Gate oxide integrity; Pyrogenic steam generator; Silicon; Wet Rapid Thermal Oxidation

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; MATHEMATICAL MODELS; STEAM GENERATORS; THERMOOXIDATION;

EID: 0039982412     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(98)00166-4     Document Type: Article
Times cited : (21)

References (15)
  • 2
    • 0004206716 scopus 로고
    • Elsevier, Amsterdam
    • 2 System, Elsevier, Amsterdam, 1988.
    • (1988) 2 System
    • Balk, P.1
  • 5
    • 0040586185 scopus 로고    scopus 로고
    • Private communication
    • K. Schmalzbauer, Private communication, 1997.
    • (1997)
    • Schmalzbauer, K.1
  • 10
    • 0002408430 scopus 로고
    • Rapid thermal annealing - Theory and practice
    • Roland A. Levy (Ed.), Plenum Press, New York
    • C. Hill, S. Jones, D. Boys, Rapid thermal annealing - Theory and practice, in: Roland A. Levy (Ed.), Reduced Thermal Processing for ULSI, Plenum Press, New York, 1989, pp. 143-180.
    • (1989) Reduced Thermal Processing for ULSI , pp. 143-180
    • Hill, C.1    Jones, S.2    Boys, D.3
  • 13
    • 0024925557 scopus 로고
    • Diffusion and oxidation of silicon
    • Dennis W. Hess, Klaus F. Jensen (Eds.), American Chemical Society, Washington, DC
    • R.B. Fair, Diffusion and oxidation of silicon, in: Dennis W. Hess, Klaus F. Jensen (Eds.), Microelectronics Processing: Chemical Engineering Aspects, American Chemical Society, Washington, DC, 1989, pp. 265-323.
    • (1989) Microelectronics Processing: Chemical Engineering Aspects , pp. 265-323
    • Fair, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.