Analysis of electrical characteristics of La2O3 thin films annealed in vacuum and others

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 569-572

  Kim, Yongshik ^a   Kuriyama, Atsushi ^a   Ueda, Isao ^a   Ohmi, Shun Ichiro ^a   Tsutsui, Kazuo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; IN-VACUUM;

EID: 84907703672     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256940     Document Type: Conference Paper

References (8)

1. [l] S. Ohmi et al., "High Quality Ultrathin La2O3 Films for High-k Gate Insulator", Proc. ESSDERC'01, pp. 235-238.
2. A. Chin et al., '"High quality La2O3 and A12O3 gate dielectrics with equivalent oxide thickness 5-10A". symp. on VLSI Tech., pp. 16-17, 2000.
3. H. J. Ostert et al., "Epitaxial PraseoLamium Oxide: ANew High-K. Dielectric". Ext. Abst. IWGL 2001, pp. 100-106.
4. Internationa! Technology Roadmap for Semiconductors (ITRS),2001
5. Sanghun Jeon et al, "Excellent Electrical Characteristics of Lanthanide (Pr, Nd, Sm, Gd, and La) Oxide and Lanthanide-doped Oxide for MOS Gate Dielectric Applications", IEDM Tech Dig 2001, pp. 471-474.
6. Y. H. Wu et. al., "Electrical Characteristics of High Quality La2O3 Gate Dielectric with Equivalent Oxide Thickness of 5A,'" IEEE Elec. Dev. Lett. Vol. 21,No. 7, pp. 341-343, 2000.
7. H. Yamainoto,"Electricai Characters Improvement of Dy203 ThinFilms by In-situ Vacuum Anneal," Meeting Abstratcts, 202,nd Meeting of ECS. p. 375, 2002.
8. P. Hesto, Instabilities in Silicon Devices, Vol. 1, 1986.