-
1
-
-
0041610704
-
-
T. Matsumoto, Y. Kudoh, M. Tahara, K-H. Yu, N. Miyakawa, H. Itani, T. Ichikizaki, A. Fujiwara, H. Tsukamoto and M. Koyanagi: Ext. Abstr. 1995 Int. Conf. Solid State Devices Materials, Tokyo, 1995, p. 1073.
-
(1995)
Ext. Abstr. 1995 Int. Conf. Solid State Devices Materials, Tokyo
, pp. 1073
-
-
Matsumoto, T.1
Kudoh, Y.2
Tahara, M.3
Yu, K.-H.4
Miyakawa, N.5
Itani, H.6
Ichikizaki, T.7
Fujiwara, A.8
Tsukamoto, H.9
Koyanagi, M.10
-
2
-
-
0031270573
-
-
P. Ramm, D. Bollmann, R. Braun, R. Buchner, U. Cao-Minh, M. Engelhardt, G. Errmann, T. Graßl, K. Hieber, H. Hübner, G. Kawala, M. Kleiner, A. Klumpp, S. Kühn, C. Landesberger, H. Lezec, W. Muth, W. Pamler, R. Popp, E. Renner, G. Ruhl, A. Sänger, U. Scheler, A. Schertel, C. Schmidt, S. Schwand, J. Weber, W. Weber: Microelectron Eng. 1997; 37 - 38:39 - 47.
-
(1997)
Microelectron Eng.
, vol.37-38
, pp. 39-47
-
-
Ramm, P.1
Bollmann, D.2
Braun, R.3
Buchner, R.4
Cao-Minh, U.5
Engelhardt, M.6
Errmann, G.7
Graßl, T.8
Hieber, K.9
Hübner, H.10
Kawala, G.11
Kleiner, M.12
Klumpp, A.13
Kühn, S.14
Landesberger, C.15
Lezec, H.16
Muth, W.17
Pamler, W.18
Popp, R.19
Renner, E.20
Ruhl, G.21
Sänger, A.22
Scheler, U.23
Schertel, A.24
Schmidt, C.25
Schwand, S.26
Weber, J.27
Weber, W.28
more..
-
3
-
-
0036287852
-
-
M. Tomisaka, H. Yonemura, M. Hoshino, K. Takahashi, T. Okamura, J. Sun and K. Kondo: Proc. 52nd Electron. Comp. Technol. Conf., San Diego, 2002, p. 1432.
-
(2002)
Proc. 52nd Electron. Comp. Technol. Conf., San Diego
, pp. 1432
-
-
Tomisaka, M.1
Yonemura, H.2
Hoshino, M.3
Takahashi, K.4
Okamura, T.5
Sun, J.6
Kondo, K.7
-
4
-
-
0036283275
-
-
M. Sunohara, T. Fujii, M. Hoshino, H. Yonemura, M. Tomisaka and K. Takahashi: Proc. 52nd Electron. Comp. Technol. Conf., San Diego, 2002, p. 238.
-
(2002)
Proc. 52nd Electron. Comp. Technol. Conf., San Diego
, pp. 238
-
-
Sunohara, M.1
Fujii, T.2
Hoshino, M.3
Yonemura, H.4
Tomisaka, M.5
Takahashi, K.6
-
5
-
-
10444250553
-
-
M. Hoshino, Y. Taguchi, K. marusaki, M. Ueno, Y. Nemoto and K. Takahashi: Proc. 20th Int. VLSI Multilevel Interconnection Conf., Marina del Rey, 2003, p. 243.
-
(2003)
Proc. 20th Int. VLSI Multilevel Interconnection Conf., Marina del Rey
, pp. 243
-
-
Hoshino, M.1
Taguchi, Y.2
Marusaki, K.3
Ueno, M.4
Nemoto, Y.5
Takahashi, K.6
-
6
-
-
0034821485
-
-
Orland
-
M. Takahashi, M.Hoshino, H. Yonemura, M.Tomisaka, M. Sunohara, M. Tanioka, T. Sato, K. Kojima and H. Terao.: Proc. 51st Electron. Comp. Technol. Conf.,Orland, 2001, p. 541.
-
(2001)
Proc. 51st Electron. Comp. Technol. Conf.
, pp. 541
-
-
Takahashi, M.1
Hoshino, M.2
Yonemura, H.3
Tomisaka, M.4
Sunohara, M.5
Tanioka, M.6
Sato, T.7
Kojima, K.8
Terao, H.9
-
7
-
-
0035300622
-
-
K. Takahashi, H. Terao, Y. Tomita, Y. Yamaji, M. Hoshino, T. Sato, T. Morifuji, M. Sunohara and M. Bonkohara: Jpn. J. Appl. Phys. 40(2001) 3032.
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, pp. 3032
-
-
Takahashi, K.1
Terao, H.2
Tomita, Y.3
Yamaji, Y.4
Hoshino, M.5
Sato, T.6
Morifuji, T.7
Sunohara, M.8
Bonkohara, M.9
-
8
-
-
0034822219
-
-
Y. Tomita, T. Morifuji, T. Ando, M. Tago, R. Kajiwara, Y. Nemoto, T. Fujii, T. Sato and K. Takahashi: Proc. 51st Electron. Comp. Technol. Conf., Orlando, 2001, p. 353.
-
(2001)
Proc. 51st Electron. Comp. Technol. Conf., Orlando
, pp. 353
-
-
Tomita, Y.1
Morifuji, T.2
Ando, T.3
Tago, M.4
Kajiwara, R.5
Nemoto, Y.6
Fujii, T.7
Sato, T.8
Takahashi, K.9
-
9
-
-
10444240601
-
-
K. Takahashi, M. Umemoto, K. Tanida, Y. Nemoto, Y. Tomita, M. Tago and M. Bonkohara: Proc. IMAPS 2002, Denver, 2002, p.354.
-
(2002)
Proc. IMAPS 2002, Denver
, pp. 354
-
-
Takahashi, K.1
Umemoto, M.2
Tanida, K.3
Nemoto, Y.4
Tomita, Y.5
Tago, M.6
Bonkohara, M.7
-
11
-
-
0011960847
-
-
Y. Tomita, M. Tago, Y. Nemoto and K. Takahashi: Proc. 3rd Int. Symp. Electron. Mater. Packaging, Jeju, 2001, p. 107.
-
(2001)
Proc. 3rd Int. Symp. Electron. Mater. Packaging, Jeju
, pp. 107
-
-
Tomita, Y.1
Tago, M.2
Nemoto, Y.3
Takahashi, K.4
-
12
-
-
0037592200
-
-
K. Tanida, M. Umemoto, Y. Tomita, M. Tago, Y. Nemoto, K. Takahashi: Proc. 53rd Electron. Comp. Technol. Conf., New Oriens, 2003, p. 1084.
-
(2003)
Proc. 53rd Electron. Comp. Technol. Conf., New Oriens
, pp. 1084
-
-
Tanida, K.1
Umemoto, M.2
Tomita, Y.3
Tago, M.4
Nemoto, Y.5
Takahashi, K.6
-
13
-
-
10444277611
-
-
K. Tanida, M. Umemoto, Y. Tomita, M. Tago, Y. Nemoto, K. Takahashi, to be presented: Ext. Abstr. 2003 Int. Conf. Solid State Devices Materials, Tokyo, 2003, p. 378.
-
(2003)
Ext. Abstr. 2003 Int. Conf. Solid State Devices Materials, Tokyo
, pp. 378
-
-
Tanida, K.1
Umemoto, M.2
Tomita, Y.3
Tago, M.4
Nemoto, Y.5
Takahashi, K.6
-
15
-
-
10444271273
-
-
MA thesis, Naval postgraduate school, Monterey
-
F. O. P. Vollweiler: MA thesis, Naval postgraduate school, Monterey, 1993.
-
(1993)
-
-
Vollweiler, F.O.P.1
-
17
-
-
0346335031
-
-
R. F. Pinizzotto, E. G. Jacobs, Y. Wu, J. A. Sees, L. A. Foster and C. Pouraghabagher: Annu. Proc. Int. Reliab. Phys. Symp., 1993, p. 209
-
(1993)
Annu. Proc. Int. Reliab. Phys. Symp.
, pp. 209
-
-
Pinizzotto, R.F.1
Jacobs, E.G.2
Wu, Y.3
Sees, J.A.4
Foster, L.A.5
Pouraghabagher, C.6
-
21
-
-
84964649222
-
-
Singapore
-
M. Umemoto, K. Tanida, Y. Tomita, T. Ando and K. Takahashi: Proc. The 4th Electron. Packaging Technol. Conf., Singapore, 2002, p.285.
-
(2002)
Proc. the 4th Electron. Packaging Technol. Conf.
, pp. 285
-
-
Umemoto, M.1
Tanida, K.2
Tomita, Y.3
Ando, T.4
Takahashi, K.5
-
22
-
-
0347590774
-
-
K. Tanida, M. Umemoto, T. Morifuji, R. Kajiwara, T. Ando, Y. Tomita, N. Tanaka and K. Takahashi: Jpn. J. Appl. Phys. 42(2003) 6390.
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
, pp. 6390
-
-
Tanida, K.1
Umemoto, M.2
Morifuji, T.3
Kajiwara, R.4
Ando, T.5
Tomita, Y.6
Tanaka, N.7
Takahashi, K.8
-
23
-
-
0036282975
-
-
M. Umemoto, Y Tomita, T. Morifuji, T Ando, T Sato and K. Takahashi: Proc. 52nd Electron. Comp. Technol. Conf., San Diego, 2002, p. 1454.
-
(2002)
Proc. 52nd Electron. Comp. Technol. Conf., San Diego
, pp. 1454
-
-
Umemoto, M.1
Tomita, Y.2
Morifuji, T.3
Ando, T.4
Sato, T.5
Takahashi, K.6
-
25
-
-
10444227608
-
-
K. Kikuchi, S. Segawa, E Jung, Y. Nemoto, H. Nakagawa, K. Tokoro, and M. Aoyagi, in. Ext Abstr 2003 Int. Conf. Solid State Devices Materials, Tokyo, 2003. p. 382.
-
(2003)
Ext Abstr 2003 Int. Conf. Solid State Devices Materials, Tokyo
, pp. 382
-
-
Kikuchi, K.1
Segawa, S.2
Jung, E.3
Nemoto, Y.4
Nakagawa, H.5
Tokoro, K.6
Aoyagi, M.7
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