Cu bump interconnections in 20 μm pitch utilizing electroless tin-cap on 3D stacked LSI

Advances in Electronic Materials and Packaging 2001

Volumn , Issue , 2001, Pages 107-114

  Tomita, Y ^a   Tago, M ^a   Nemoto, Y ^a   Takahashi, K ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRODES; ELECTROLESS PLATING; MODIFIED ATMOSPHERE PACKAGING; PACKAGING MATERIALS; THREE DIMENSIONAL INTEGRATED CIRCUITS; TIN;

BONDING CONDITIONS; BONDING FORCES; BONDING TEMPERATURES; COPPER BUMPS; CU ELECTRODE; THERMAL COMPRESSION BONDING; THROUGH HOLE; VERTICAL INTERCONNECTIONS;

FLIP CHIP DEVICES;

EID: 0011960847     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMAP.2001.983968     Document Type: Conference Paper

References (13)

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