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Volumn 43, Issue 10 A, 2004, Pages

Wafer bonding of GaN and ZnSSe for optoelectronic applications

Author keywords

GaN; II VI distributed Bragg reflectors; LED; Resonant cavity structures; Wafer bonding; ZnSSe

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAVITY RESONATORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING ZINC COMPOUNDS;

EID: 10444261130     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1275     Document Type: Article
Times cited : (4)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.