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Volumn 83, Issue 3, 2003, Pages 560-562
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n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
GAIN MEASUREMENT;
HETEROJUNCTIONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON WAFERS;
WAFER FUSION;
BIPOLAR TRANSISTORS;
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EID: 0041625728
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1592887 Document Type: Article |
Times cited : (9)
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References (8)
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