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Volumn 83, Issue 3, 2003, Pages 560-562

n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GAIN MEASUREMENT; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

EID: 0041625728     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592887     Document Type: Article
Times cited : (9)

References (8)
  • 7
    • 0042454972 scopus 로고    scopus 로고
    • Ph.D. dissertation, Electrical and Computer Engineering Department, University of California at Santa Barbara
    • P. Kozodoy, Ph.D. dissertation, Electrical and Computer Engineering Department, University of California at Santa Barbara, 1999.
    • (1999)
    • Kozodoy, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.