ZnSe/ZnS distributed Bragg reflectors in the blue region grown on (311)B GaAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6672-6676

  Tawara, Takehiko ^a   Arita, Munetaka ^a   Uesugi, Katsuhiro ^a   Suemune, Ikuo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

(311)B; Distributed Bragg reflector; MOVPE; Reflectivity; ZnSe ZnS

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE;

DISTRIBUTED BRAGG REFLECTORS; THERMAL CLEANING; ZINC SELENIDE; ZINC SULFIDE;

MIRRORS;

EID: 0031277386     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6672     Document Type: Article

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