Microstructure of GaAs/GaN interfaces produced by direct wafer fusion

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3152-3154

  Jasinski, J ^a   Liliental Weber, Z ^a   Estrada, S ^b   Hu, E ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; BONDED INTERFACE; DISLOCATION NETWORKS; GAAS; NATIVE OXIDES; ONE-DIMENSIONAL ARRAYS; WAFER FUSION;

DISLOCATIONS (CRYSTALS); GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

WAFER BONDING;

EID: 79956006412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515116     Document Type: Article

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