The effects of Cu diffusion in Cu/TiN/SiO2/Si capacitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5792-5795

  Kwak, Mi Young ^a   Shin, Dong Hyuk ^b   Kang, Tae Won ^a   Kim, Ki Nam ^b  

^a Dongguk University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

C v measurement; Cu metallization; Diffusion barrier; Interconnection; Tin

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; COPPER; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; METALLIZING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; STRESS ANALYSIS; TITANIUM NITRIDE; VOLTAGE MEASUREMENT;

HIGH FREQUENCY CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS;

MOS CAPACITORS;

EID: 0033334679     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5792     Document Type: Article

References (17)

1. P. L. Pai and C. H. Ting: IEEE Electron Device Lett. 10 (1989) 423.
2. C. A. Chang: J. Vac. Sci. Technol A 8 (1990) 3796.
3. S. Q. Wang, S. Suter, C. Hoeflich and B. J. Burrow: J. Appl. Phys. 73 (1993) 2301.
4. J. F. Shackeloford: Materials Science for Engineers (MacMillan, New York, 1988) p. 508.
5. H. Miyazaki, K. Hinode, Y. Homma and K. Mukai: Ext. Abstr. (48th Fall Meet., 1987), Japan Society of Applied Physics, p. 329 [in Japanese].
6. A. G. Milnes: Deep Impurities in Semiconductors (Wiley, New York, 1973).
7. J. D. McBraycr, R. M. Swanson and T. W. Sigmon: J. Electrochem. Soc. 113 (1986) 1242.
8. J. L. Liotard, D. Gupta, P. A. Psaras and P. S. Ho: J. Appl. Phys. 57 (1985) 1895.
9. J. Li, J. W. Stranc, S. W. Russell, S. Q. Hong, J. W. Mayer, T. K. Marais, C. C. Theron and R. Prctorius: J. Appl. Phys. 72 (1992) 2810.
10. S. Y. Lee, S. K. Rha, W. J. Lee, D. W. Kim and C. O. Park: J. Kor. Vac. Soc. 5 (1996) 333.
11. E. H. Nicollian and J. R. Brews: MOS Physics and Technology (John Wiley & Sons, New York, 1982).
12. P. G. Shewmon: Diffusion in Solids (McGraw Hill, New York, 1963).
13. B. Tuck: Introduction to Diffusion in Semiconductors (Peter Peregrinus, London, 1974).
14. K. N. Tu, J. W. Mayer and L. C. Feldman: Electronic Thin Film Science for Electrical Engineers and Materials Scientists (Macmillan, New York, 1992).
15. L. M. Terman: Solid-Stale Electron. 5 (1962) 285.
16. M. Y. Kwak, D. H. Shin, T. W. Kang and K. N. Kim: Thin Solid Films 339 (1999) 290.
17. A. Goctzberger, A. D. Lopez and R. J. Strain: J. Electrochem. Soc. 120 (1973) 90.