Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep

Materials Research Society Symposium - Proceedings

Volumn 564, Issue , 1999, Pages 551-558

  Cohen, S A ^a   Liu, J ^b   Gignac, L ^a   Ivers, T ^b   Armbrust, D ^b   Rodbell, K P ^a   Gates, S M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; COPPER; DEPOSITION; DIFFUSION IN SOLIDS; HYDROCARBONS; IONS; PERMITTIVITY; SILICON NITRIDE; SILICON WAFERS; THIN FILMS;

DIFFUSION BARRIERS; METAL INSULATOR SILICON (MIS); TRIANGULAR VOLTAGE SWEEP;

DIELECTRIC FILMS;

EID: 0033279483     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-564-551     Document Type: Article

References (4)

1. Gopal Gaghaven, Chien Chiang, Paul B. Anders, Sing-Mo Tzeng, Reynaldo Villasol, Gang Bai, Mark Bohr, and David B. Fraser, Thin Solid Films 262, 168 (1995).
2. Alvin L.S. Loke, Jeffrey T. Wetzel, Changsup Ryu, W.-J. Lee, and S. Simon Wong, Symposium on VLSI Technology Digest of Technical Papers, 26 (1998).
3. E. H. Nichollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, N.Y., 1982, pp. 435-440.
4. Hiroshi Miyazaki, Hisao Kojima, and Kenji Hinode, J. Appl. Phys. 81, 7746 (1997).