CVD and PVD transition metal nitrides as diffusion barriers for Cu metallization

International Conference on Solid-State and Integrated Circuit Technology Proceedings

Volumn , Issue , 1998, Pages 243-246

  Sun, S C ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC CONDUCTIVITY; METALLIZING; NITRIDES; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTH DISPERSIVE SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

FACE CENTERED CUBIC (FCC) PHASE POLYCRYSTALLINE; PHYSICAL VAPOR DEPOSITION (PVD);

SEMICONDUCTING FILMS;

EID: 0032226729     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)