Application of HfN/Hf bilayered film as a diffusion barrier for Cu metallization system of Si large-scale integration

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 A, 2000, Pages 1835-1839

  Yoshimoto, Ken Ichi ^a   Shinkai, Satoko ^b,c   Sasaki, Katsutaka ^a  

^a ASAHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^c JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

Cu metallization; Diffusion barrier; HfN; LSI contact structure; Metal semiconductor interface

Indexed keywords

EID: 1042277680     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1835     Document Type: Article

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