Barrier integrity testing of Ta using triangular voltage sweep and a novel CV-BTS test structure

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 255-260

  Book, G W ^a   Pfeifer, K ^a   Smith, S ^a  

^a SEMATECH   (United States)

Author keywords

Barrier integrity; Cu; CV BTS; Ta; TVS

Indexed keywords

CAPACITANCE; COPPER; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC POTENTIAL; TANTALUM;

TRIANGULAR VOLTAGE SWEEP;

MICROELECTRONICS;

EID: 0036776406     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00797-9     Document Type: Conference Paper

References (3)

1. Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep