Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 322-326

  Ishikawa, Hiroyasu ^a   Zhang, Baijun ^a   Asano, Kenta ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON CARBIDE; THERMAL CONDUCTIVITY;

DISLOCATION DENSITIES; DISTRIBUTED BRAGG REFLECTOR (DBR); INTERFERENCE MICROSCOPY; MULTI-QUANTUM-WELL (MQW);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 10044287457     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.054     Document Type: Conference Paper

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