Physical and electrical properties of W/MNx/poly-Si1-xGex (x = 0, 0.2, 0.6) gates stack with post-thermal process

Journal of the Electrochemical Society

Volumn 151, Issue 1, 2004, Pages

  Kang, S K ^a   Min, B G ^a   Kim, J J ^a   Ko, D H ^a   Kang, H B ^b   Yang, C W ^b   Lim, K Y ^c   Ahn, T H ^c  

^a Yonsei University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON COMPOUNDS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; GRAIN GROWTH; MOSFET DEVICES; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SURFACE ROUGHNESS; THERMAL EFFECTS; TUNGSTEN; TUNGSTEN COMPOUNDS;

CRYSTALLINITY; INTERFACIAL REACTION; POST THERMAL PROCESS; SHEET RESISTANCE;

GATES (TRANSISTOR);

EID: 0842311648     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1632480     Document Type: Article

References (19)

1. Q. Lu, Y. C. Yeo, P. Ranade, H. Takeuchi, T.-J. King, C. Hu, S. C. Song, H. F. Luan, and D.-L. Kwong, Technical Digest for VLSI Symposium, p. 72 (2000).
2. C.-C. Chen, H.-C. Lin, C.-Y. Chang, T.-S. Chao, S.-C. Huang, W.-F. Wu, T.-Y. Huang, and M.-S. Liang, in Proceedings of the 5th International Symposium on Plasma Processing-Induced Damage, p. 117 (2000).
3. H. N. Chua, K. L. Pey, S. Y. Siah, L. Y. Ong, E. H. Lim, C. L. Gan, K. H. See, and C. S. Ho, in Proceedings of the 7th International Symposium on Physical and Failure Analysis of Integrated Circuits, IEEE, p. 44 (1999).
4. T. Ohguro, M. Saito, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, IEEE Trans. Electron Devices, 47, 2208 (2000).
5. J.-U. Bae, D. K. Sohn, J.-S. Park, B. H. Lee, C. H. Han, and J. J. Kim, Technical Digest for VLSI Symposium, p. 53 (1999).
6. K. Takeuchi, T. Yamamoto, A. Furukawa, T. Tamura, and K. Yoshida, Technical Digest for VLSI Symposium, p. 9 (1995).
7. T. Ito, H. Horie, T. Fukano, and H. Ishikawa, IEEE Trans. Electron Devices, 33, 464 (1986).
8. N. Yamamoto, S. Iwata, N. Kobayashi, and T. Terada, in Proceedings of the 15th Solid-State Device and Materials Conference, IEEE and Japanese Physical Society, p. 217 (1983).
9. W. A. Metz, N. J. Szluk, G. Miller, and H. O. Hayworth, IEEE Electron Device Lett., EDL-6, 372 (1985).
10. Y. Hu, D. Anderson, A. Rotondaro, S. Obrien, Wei-Yung Hsu, R. Kraft, P. Tiner, P. Nicollian, and S. Aur, Technical Digest for VLSI Symposium, p. 247 (1999).
11. H. Yang, G. A. Brown, J. C. Hu, J. P. Lu, R. Kraft, A. L. P. Rotondaro, S. V. Hattangady, I.-C. Chen, J. D. Luttmer, R. A. Chapman, P. J. Chen, H. L. Tsi, B. Amirhekmat, and L. K. Magel, Tech. Dig. - Int. Electron Devices Meet., 1997, 459.
12. Y. Akasaka, S. Suehiro, K. Nakajima, T. Nakasugi, K. Miyano, K. Kasai, H. Oyamatsu, M. Kinugawa, M. T. Takagi, K. Agawa, F. Matsuoka, M. Kakumu, and K. Suguro, IEEE Trans. Electron Devices, 43, 1864 (1996).
13. T. J. King, J. R. Pfiester, J. D. Shott, J. P. McVittie, K. C. Saraswat, Tech. Dig. - Int. Electron Devices Meet., 1990, 253.
14. Y. V. Ponomarev, C. Salm, J. Schmitz, P. H. Woerlee, P. A. Stolk, and D. J. Gravesteijn, Tech. Dig. - Int. Electron Devices Meet., 1997, 829.
15. S.-K. Kang, J. J. Kim, D.-H. Ko, H. B. Kang, C. W. Yang, T. H. Ahn, I. S. Yeo, T. W. Lee, and Y. H. Lee, J. Electrochem. Soc., 150, G167 (2003).
16. H. C. Lin, C. Y. Chang, W. H. Chen, W. C. Tsai, T. C. Chang, and H. Y. Lin, J. Electrochem. Soc., 141, 2559 (1994).
17. B. H. Lee, K. S. Lee, D. K. Sohn, J.-S. Byun, C. H. Han, J.-S. Park, S. B. Han, and J. W. Park, Appl. Phys. Lett., 76, 2538 (2000).
18. H. S. Joo, B. Ng, D. Lopes, and G. Miner, in ULSI Process Integration, C. L. Claeys, H. Iwai, G. Bronner, and R. Fair, Editors, PV 99-18, p. 203, The Electrochemical Society Proceedings Series, Pennington, NJ (1999).
19. Fumio Ohtake, Yasushi Akasaka, Atsushi Murakoshi, Kyoichi Suguro, and Toshiro Nakanishi, Technical Digest for VLSI Symposium, p. 74 (2000).