Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2000, Pages 117-120

  Chen, C C ^a   Lin, H C ^a   Chang, C Y ^a   Chao, T S ^a   Huang, S C ^a   Wu, W F ^a   Huang, T Y ^a   Liang, M S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEGRADATION; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; SPUTTER DEPOSITION; TITANIUM COMPOUNDS;

CHARGING DAMAGE; FLAT BAND VOLTAGE; INTERFACE STATE DENSITY; PLASMA PROCESS INDUCED DAMAGE;

PLASMA APPLICATIONS;

EID: 0034505578     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)