In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

Applied Physics Letters

Volumn 76, Issue 18, 2000, Pages 2538-2540

  Lee, Byung Hak ^a   Lee, Kee Sun ^a,b   Sohn, Dong Kyun ^a,c   Byun, Jeong Soo ^a,d   Han, Chang Hee ^a   Park, Ji Soo ^a   Han, Sang Beom ^a   Park, Jin Woon ^a  

^a R and D Division   (South Korea)

^b Kongju National University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001527899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126401     Document Type: Article

References (11)

1. W.-K. Yeh, Y.-C. Shiau, and M.-C. Chen, J. Electrochem. Soc. 144, 214 (1997).
2. J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, IEEE Trans. Electron Devices ED-38, 262 (1991).
3. J. S. Byun, B. H. Lee, J.-S. Park, D. K. Sohn, S. J. Choi, and J. J. Kim, J. Electrochem. Soc. 145, 3228 (1998).
4. H. Wakabayashi, T. Andoh, K. Sato, K. Yoshida, H. Miyamoto, T. Mogami, and T. Kunio, Tech. Dig. Int. Electron Devices Meet., 447 (1996).
5. M. T. Takagi, K. Miyashita, H. Koyama, K. Nakajima, K. Miyano, Y. Akasaka, Y. Hiura, S. Inaba, A. Azuma, H. Koike, H. Yoshimura, K. Suguro, and H. Ishiuchi, Tech. Dig. Int. Electron Devices Meet., 455 (1996).
6. Y. Akasaka, S. Suehiro, K. Nakajima, T. Nakasugi, K. Miyano, K. Kasai, H. Oyamatsu, M. Kinugawa, M. Takayanagi, M. Takagi, K. Agawa, F. Matsuoka, M. Kakumu, and K. Suguro, Proceedings of the 12th International VLSI Multilevel Interconnection Conference (VMIC'95), Santa Clara, CA (1995), p. 168.
7. W. A. Metz, N. J. Szluk, G. Miller, and H. O. Hayworth, IEEE Electron Device Lett. EDL-6, 372 (1985).
8. C. W. Lee, Y. T. Kim, and J. Y. Lee, Appl. Phys. Lett. 64, 619 (1994).
9. S.-L. Zhang, R. Palmans, J. Keinonen, C. S. Petersson, and K. Maex, Appl. Phys. Lett. 67, 2998 (1995).
10. Y. Hiura, A. Azuma, K. Nakajima, Y. Akasaka, K. Miyano, H. Nitta, A. Honjo, K. Tsuchida, Y. Toyoshima, K. Suguro, and Y. Kohyama, Tech. Dig. Int. Electron Devices Meet., 389 (1998).
11. K. Affolter, H. Kattelus, and M.-A. Nicolet, Mater. Res. Soc. Symp. Proc. 47, 167 (1985).